一種新型可調(diào)驅(qū)動(dòng)電壓的SiC/Si混合開(kāi)關(guān)驅(qū)動(dòng)電路
中國(guó)電機(jī)工程學(xué)報(bào)
頁(yè)數(shù): 13 2023-10-20
摘要: 為提高碳化硅金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)晶體管(silicon carbide metal oxide semiconductor filed effect transistor,SiC-MOSFET)與硅基絕緣柵極雙極晶體管(silicon insulated gate bipolar transistor,Si-IGBT)并聯(lián)混合開(kāi)關(guān)(SiC/Si hybrid switch,S...